Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO 2 and ZrO 2 high- κ dielectrics
| Autor: | Abermann, S., Efavi, J., Sjöblom, G., Lemme, M., Olsson, J., Bertagnolli, E. |
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| Zdroj: | In Microelectronics Reliability 2007 47(4):536-539 |
| Databáze: | ScienceDirect |
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