Gate oxide failures due to anomalous stress from HBM ESD testers

Autor: Duvvury, Charvaka, Steinhoff, Robert, Boselli, Gianluca, Reddy, Vijay, Kunz, Hans, Marum, Steve, Cline, Roger
Zdroj: In Microelectronics Reliability 2006 46(5):656-665
Databáze: ScienceDirect