Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides
| Autor: | Ribes, G., Bruyère, S., Denais, M., Monsieur, F., Huard, V., Roy, D., Ghibaudo, G. |
|---|---|
| Zdroj: | In Microelectronics Reliability 2005 45(12):1842-1854 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect