Implementation of high- k and metal gate materials for the 45 nm node and beyond: gate patterning development
| Autor: | Beckx, S., Demand, M., Locorotondo, S., Henson, K., Claes, M., Paraschiv, V., Shamiryan, D., Jaenen, P., Boullart, W., Degendt, S., Biesemans, S., Vanhaelemeersch, S., Vertommen, J., Coenegrachts, B. |
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| Zdroj: | In Microelectronics Reliability 2005 45(5):1007-1011 |
| Databáze: | ScienceDirect |
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