Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors

Autor: Deloffre, E., Montès, L., Ghibaudo, G., Bruyère, S., Blonkowski, S., Bécu, S., Gros-Jean, M., Crémer, S.
Zdroj: In Microelectronics Reliability 2005 45(5):925-928
Databáze: ScienceDirect