Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics
| Autor: | Tsujikawa, Shimpei, Yugami, Jiro |
|---|---|
| Zdroj: | In Microelectronics Reliability 2005 45(1):65-69 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect