Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides
| Autor: | Bravaix, A., Goguenheim, D., Revil, N., Vincent, E. |
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| Zdroj: | In Microelectronics Reliability 2004 44(1):65-77 |
| Databáze: | ScienceDirect |
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