Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress
| Autor: | Lee, Yi-Mu, Wu, Yider, Lucovsky, Gerald |
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| Zdroj: | In Microelectronics Reliability 2004 44(2):207-212 |
| Databáze: | ScienceDirect |
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