Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies
| Autor: | Bravaix, A., Trapes, C., Goguenheim, D., Revil, N., Vincent, E. |
|---|---|
| Zdroj: | In Microelectronics Reliability 2003 43(8):1241-1246 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect