On the role of holes in oxide breakdown mechanism in inverted nMOSFETs
| Autor: | Monsieur, F, Vincent, E, Huard, V, Bruyère, S, Roy, D, Skotnicki, T, Pananakakis, G, Ghibaudo, G |
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| Zdroj: | In Microelectronics Reliability 2003 43(8):1199-1202 |
| Databáze: | ScienceDirect |
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