Statistical modeling of MOS devices for parametric yield prediction

Autor: Liou, Juin J. a, b, ∗, Zhang, Qiang a, McMacken, John c, Thomson, J.Ross c, Stiles, Kevin c, Layman, Paul c
Zdroj: In Microelectronics Reliability 2002 42(4):787-795
Databáze: ScienceDirect