The electron irradiation effects on silicon gate dioxide used for power MOS devices
| Autor: | Badila, M. a, Godignon, Ph. b, Millan, J. b, Berberich, S. c, ∗, Brezeanu, G. d |
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| Zdroj: | In Microelectronics Reliability 2001 41(7):1015-1018 |
| Databáze: | ScienceDirect |
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