Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices
| Autor: | King, Everett E, Lacoe, Ronald C *, Wang-Ratkovic, Janet |
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| Zdroj: | In Microelectronics Reliability May 2001 41(5):649-660 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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