Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

Autor: Golan, G *, Rabinovich, E, Inberg, A, Axelevitch, A, Lubarsky, G, Rancoita, P.G, Demarchi, M, Seidman, A, Croitoru, N
Zdroj: In Microelectronics Reliability 2001 41(1):67-72
Databáze: ScienceDirect