Numerical investigation for a Grounded Gate NMOS Transistor under electrostatic discharge (ESD) through TLP method
| Autor: | Galy, P., Berland, V., Foucher, B., Lombaert-Valot, I., Guilhaume, A., Chante, J.P., Dufrenne, S., Bardy, S. |
|---|---|
| Zdroj: | In Microelectronics Reliability August-October 2000 40(8-10):1473-1477 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect