Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
| Autor: | Berntgen, Jürgen *, Behres, Alexander, Kluth, Jürgen, Heime, Klaus, Daumann, Walter, Auer, Uwe, Tegude, Franz-Josef |
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| Zdroj: | In Microelectronics Reliability 2000 40(11):1911-1914 |
| Databáze: | ScienceDirect |
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