Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy
| Autor: | Yoon, S.F. *, Gay, B.P., Zheng, H.Q., Ang, K.S., Wang, H., Ng, G.I. |
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| Zdroj: | In Microelectronics Journal January 1999 30(1):23-28 |
| Databáze: | ScienceDirect |
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