Multiphysics simulation study of thermal stress effects in nanoscale FinFETs heterogeneously integrated with GaN high-power device on silicon substrate
| Autor: | Duan, Huali, Li, Erping, Huang, Qinyi, Xu, Yuehang, Chen, Wenchao |
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| Zdroj: | In Microelectronics Journal August 2024 150 |
| Databáze: | ScienceDirect |
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