Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories

Autor:	Wang, Zhe, Liu, Yan, Zhou, Jiuren, Han, Genquan
Zdroj:	In Microelectronics Journal January 2024 143
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect