9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device
| Autor: | Lian, Mengxiao, Yin, Yian, Li, Jialin, Zou, Bingzhi, Zhang, Keming, Zhang, Xichen, Xie, Yafang, Wu, You, Zhang, Zhixiang |
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| Zdroj: | In Microelectronics Journal July 2023 137 |
| Databáze: | ScienceDirect |
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