A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices
Autor: | Yang, Jianguo, Lin, Ruijun, Zhou, Keji, Zhang, Yuejun, Xue, Xiaoyong, Lv, Hangbing |
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Zdroj: | In Microelectronics Journal October 2022 128 |
Databáze: | ScienceDirect |
Externí odkaz: |