A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices

Autor: Yang, Jianguo, Lin, Ruijun, Zhou, Keji, Zhang, Yuejun, Xue, Xiaoyong, Lv, Hangbing
Zdroj: In Microelectronics Journal October 2022 128
Databáze: ScienceDirect