GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
| Autor: | Ajayan, J., Nirmal, D., Mohankumar, P., Kuriyan, Dheena, Fletcher, A.S. Augustine, Arivazhagan, L., Kumar, B. Santhosh |
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| Zdroj: | In Microelectronics Journal October 2019 92 |
| Databáze: | ScienceDirect |
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