Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect
| Autor: | Hentschel, R. *, Wachowiak, A., Großer, A., Kotzea, S., Debald, A., Kalisch, H., Vescan, A., Jahn, A., Schmult, S., Mikolajick, T. |
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| Zdroj: | In Microelectronics Journal September 2019 91:42-45 |
| Databáze: | ScienceDirect |
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