Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation
| Autor: | Kumar, Manoj, Haldar, Subhasis, Gupta, Mridula, Gupta, R.S. |
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| Zdroj: | In Microelectronics Journal November 2014 45(11):1508-1514 |
| Databáze: | ScienceDirect |
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