Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates

Autor: Andersson, T.G., Liu, X.Y., Aggerstam, T., Holmström, P., Lourdudoss, S., Thylen, L., Chen, Y.L., Hsieh, C.H., Lo, I.
Zdroj: In Microelectronics Journal February 2009 40(2):360-362
Databáze: ScienceDirect