Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency

Autor: Kumar, Sona P., Agrawal, Anju, Chaujar, Rishu, Gupta, Mridula, Gupta, R.S.
Zdroj: In Microelectronics Journal December 2008 39(12):1416-1424
Databáze: ScienceDirect