Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation

Autor: Kumar, Sona P. a, Agrawal, Anju b, Chaujar, Rishu a, Kabra, Sneha a, Gupta, Mridula a, Gupta, R.S. a, ⁎
Zdroj: In Microelectronics Journal October-November 2007 38(10-11):1013-1020
Databáze: ScienceDirect