Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
| Autor: | Szekeres, A., Nikolova, T., Simeonov, S., Gushterov, A., Hamelmann, F., Heinzmann, U. |
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| Zdroj: | In Microelectronics Journal January 2006 37(1):64-70 |
| Databáze: | ScienceDirect |
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