Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates
| Autor: | Sghaier, N., Trabelsi, M., Yacoubi, N., Bluet, J.M., Souifi, A., Guillot, G., Gaquière, C., DeJaeger, J.C. |
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| Zdroj: | In Microelectronics Journal April 2006 37(4):363-370 |
| Databáze: | ScienceDirect |
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