Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells

Autor: de Almeida, R.B., Borges, A.N., Machado, P.C.M., Osório, F.A.P.
Zdroj: In Microelectronics Journal March-June 2005 36(3-6):431-433
Databáze: ScienceDirect