Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET
| Autor: | Rong, Yang ∗, Jinsheng, Luo, Jing, Tu, Ruizhi, Zhang |
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| Zdroj: | In Microelectronics Journal February 2004 35(2):145-149 |
| Databáze: | ScienceDirect |
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