High power lasers based on submonolayer InAs–GaAs quantum dots and InGaAs quantum wells
| Autor: | Kovsh, A.R ∗, Zhukov, A.E, Maleev, N.A, Mikhrin, S.S, Livshits, D.A, Shernyakov, Y.M, Maximov, M.V, Pihtin, N.A, Tarasov, I.S, Ustinov, V.M, Alferov, Zh.I, Wang, J.S, Wei, L, Lin, G, Chi, J.Y, Ledentsov, N.N, Bimberg, D |
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| Zdroj: | In Microelectronics Journal May-August 2003 34(5-8):491-493 |
| Databáze: | ScienceDirect |
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