The investigation of properties of electron transport in AlGaN/GaN heterostructures

Autor: Danylyuk, S.V. , Vitusevich, S.A., Podor, B., Belyaev, A.E., Avksentyev, A.Yu., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.
Zdroj: In Microelectronics Journal May-August 2003 34(5-8):575-577
Databáze: ScienceDirect