The investigation of properties of electron transport in AlGaN/GaN heterostructures
Autor: | Danylyuk, S.V. ∗, Vitusevich, S.A., Podor, B., Belyaev, A.E., Avksentyev, A.Yu., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F. |
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Zdroj: | In Microelectronics Journal May-August 2003 34(5-8):575-577 |
Databáze: | ScienceDirect |
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