Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

Autor: Ong, S.Y. *, Chor, E.F., Leung, Y.K., Lee, James, Li, W.S., See, Alex, Chan, Lap
Zdroj: In Microelectronics Journal 2 January 2002 33(1-2):55-60
Databáze: ScienceDirect