Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics
| Autor: | Kang, Ey Goo, Kim, Sangsig, Sung, Man Young * |
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| Zdroj: | In Microelectronics Journal September 2001 32(9):749-753 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect