The removal of metal impurities from the surface of Czochralski wafers using a porous silicon-based gettering under a gas flow HCl/O2 dry

Autor: Zarroug, Ahmed, Hamed, Zied Ben, Laatar, Fakher, Derbali, Lotfi, Ezzaouia, Hatem
Zdroj: In Materials Research Bulletin July 2017 91:127-134
Databáze: ScienceDirect