Temperature dependence of the anisotropy of the infrared dielectric properties and phonon-plasmon coupling in n-doped 4H-SiC

Autor: Chahal, J., Rahbany, N., El-Helou, Y., Wu, K.T., Bruyant, A., Zgheib, C., Kazan, M.
Zdroj: In Journal of Physics and Chemistry of Solids April 2024 187
Databáze: ScienceDirect