Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior

Autor: Karbalaei, Mohammad, Dideban, Daryoosh, Ramezani, Zeinab, Sadegh Amiri, Iraj
Zdroj: In Journal of Physics and Chemistry of Solids September 2021 156
Databáze: ScienceDirect