Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior
Autor: | Karbalaei, Mohammad, Dideban, Daryoosh, Ramezani, Zeinab, Sadegh Amiri, Iraj |
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Zdroj: | In Journal of Physics and Chemistry of Solids September 2021 156 |
Databáze: | ScienceDirect |
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