Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

Autor: Huang, Hai-Qin, Liu, Feng-Juan, Sun, Jian, Zhao, Jian-Wei, Hu, Zuo-Fu, Li, Zhen-Jun, Zhang, Xi-Qing
Zdroj: In Journal of Physics and Chemistry of Solids 2011 72(12):1393-1396
Databáze: ScienceDirect