MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

Autor: Pchelyakov, O.P., Nikiforov, A.I., Olshanetsky, B.Z., Teys, S.A., Yakimov, A.I., Chikichev, S.I.
Zdroj: In Journal of Physics and Chemistry of Solids 2008 69(2):669-672
Databáze: ScienceDirect