The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Autor: Leide, Alexander J., Hobbs, Linn W., Wang, Ziqiang, Chen, Di, Shao, Lin, Li, Ju
Zdroj: In Journal of Nuclear Materials February 2019 514:299-310
Databáze: ScienceDirect