Ambipolar a-SiGe:H thin-film transistors fabricated at 200 °C

Autor: Dominguez, Miguel, Rosales, Pedro, Torres, Alfonso, Moreno, Mario, Molina, Joel, De la Hidalga, Francisco, Zuniga, Carlos, Calleja, Wilfrido
Zdroj: In Journal of Non-Crystalline Solids 1 September 2012 358(17):2340-2343
Databáze: ScienceDirect