Junction capacitance study of an oxygen impurity defect exhibiting configuration relaxation in amorphous silicon–germanium alloys deposited by hot-wire CVD
| Autor: | Datta, Shouvik, Cohen, J. David, Xu, Yueqin, Mahan, A.H., Branz, Howard M. |
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| Zdroj: | In Journal of Non-Crystalline Solids 1 May 2008 354(19-25):2126-2130 |
| Databáze: | ScienceDirect |
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