Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates

Autor: Gueunier-Farret, M.E., Bazin, C., Kleider, J.P., Longeaud, C., Bulkin, P., Daineka, D., Dao, T.H., Roca i Cabarrocas, P., Descamps, P., Kervyn de Meerendre, T., Leempoel, P., Meaudre, M., Meaudre, R.
Zdroj: In Journal of Non-Crystalline Solids 15 June 2006 352(9-20):1913-1916
Databáze: ScienceDirect