A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high- κ gate dielectrics
| Autor: | Autran, J.L., Munteanu, D., Bescond, M., Houssa, M., Said, A. |
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| Zdroj: | In Journal of Non-Crystalline Solids 2005 351(21):1897-1901 |
| Databáze: | ScienceDirect |
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