Role of arsenic vapor pressure in transformation of InAs quantum dots during overgrowth by a GaAs capping layer

Autor: Balakirev, Sergey, Nadtochiy, Alexey, Kryzhanovskaya, Natalia, Kirichenko, Danil, Chernenko, Natalia, Shandyba, Nikita, Komarov, Sergey, Dragunova, Anna, Zhukov, Alexey, Solodovnik, Maxim
Zdroj: In Journal of Luminescence August 2024 272
Databáze: ScienceDirect