Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Autor: Al Huwayz, M., Galeti, H.V.A., Lemine, O.M., Ibnaouf, K.H., Alkaoud, A., Alaskar, Y., Salhi, A., Alhassan, S., Alotaibi, S., Almalki, A., Almunyif, A., Alhassni, A., Jameel, D.A., Gobato, Y. Galvão, Henini, M.
Zdroj: In Journal of Luminescence November 2022 251
Databáze: ScienceDirect