Analysis of the Tb3+ recombination in ion implanted AlxGa1−xN (0≤x≤1) layers

Autor: Rodrigues, J., Fialho, M., Magalhães, S., Correia, M.R., Rino, L., Alves, E., Neves, A.J., Lorenz, K., Monteiro, T.
Zdroj: In Journal of Luminescence October 2016 178:249-258
Databáze: ScienceDirect