Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
| Autor: | Fini, P *, Marchand, H, Ibbetson, J.P, DenBaars, S.P, Mishra, U.K, Speck, J.S |
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| Zdroj: | In Journal of Crystal Growth 2000 209(4):581-590 |
| Databáze: | ScienceDirect |
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